Capacitors of semiconductor devices and methods of...

Details Capacitors of semiconductor devices and methods of... Capacitors of semiconductor devices and methods of...

2006-12-12

2006-12-12

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S770000, C438S775000

Reexamination Certificate

active

07148101

ABSTRACT:
Capacitors of semiconductor devices and methods of fabricating the same are disclosed. An example capacitor-fabricating method comprises: forming a first insulating layer by nitrifying a semiconductor substrate; forming a second insulating layer by depositing a transition element on the first insulating layer and performing a reoxidation process; forming a third insulating layer by nitrifying the second insulating layer using a forming gas; and forming a conducting layer on top of the third insulating layer.

REFERENCES:
patent: 6569731 (2003-05-01), Wu et al.
patent: 6656788 (2003-12-01), Park et al.
patent: 2002/0095756 (2002-07-01), Park et al.
patent: 2003/0000645 (2003-01-01), Dornfest
patent: 2003/0052335 (2003-03-01), Lachner et al.
patent: 1020010058485 (2001-07-01), None

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