Capacitors and methods with praseodymium oxide insulators

Details Capacitors and methods with praseodymium oxide insulators Capacitors and methods with praseodymium oxide insulators

2007-04-27

2010-11-16

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S381000, C438S386000, C438S393000

Reexamination Certificate

active

07833914

ABSTRACT:
Methods of forming and the resulting capacitors formed by these methods are shown. Monolayers that contain praseodymium are deposited onto a substrate and subsequently processed to form praseodymium oxide dielectrics. Monolayers that contain titanium or other metals are deposited onto a substrate and subsequently processed to form metal electrodes. Resulting capacitor structures includes properties such as improved dimensional control. One improved dimensional control includes thickness. Some resulting capacitor structures also include properties such as an amorphous or nanocrystalline microstructure. Selected components of capacitors formed with these methods have better step coverage over substrate topography and more robust film mechanical properties.

REFERENCES:
patent: 2002/0017658 (2002-02-01), Tsubouchi et al.
patent: 2003/0168750 (2003-09-01), Basceri et al.
patent: 2006/0110870 (2006-05-01), Bhattacharyya
patent: 2006/0125030 (2006-06-01), Ahn et al.
patent: 2006/0273366 (2006-12-01), Ko et al.
patent: 2007/0066015 (2007-03-01), Park et al.
patent: 2008/0121963 (2008-05-01), Govindarajan
Adachi et al. “The Binary Rare earth oxides” 1998 Chem. Rev. pp. 1479-1514.
Aarik, Jaan, “Atomic layer growth of epitaxial TiO2thin films from TiCI4and H2O on α -AI2O3substrates”,Journal of Crystal Growth, 242(1-2), (2002), 189-198.
Armacost, M, et al., “A high reliability metal insulator metal capacitor for 0.18 um copper technology”,Electron Devices Meeting, IEDM Technical Digest. International, IBM Semiconductor Research and Development Center, Hopewell Junction, NY,(2000), 157-160.
Babcock, Jeffrey A., et al., “Analog Characteristics of Metal-Insulator-Metal Capacitors using PECVD Nitride Dielectrics”,IEEE Electron Device Letters, vol. 22 Part 5, (2001),230-232.
Chen, S B., et al., “High-density MIM capacitors using AI2O3and A1TiOxdielectics”,IEEE Electron Device Letters, 23(4), (Apr. 2002), 185-87.
Emonet, Nicolas, et al., “Evolution of stacked-capacitor technology for embedded-DRAM applications”,C Alliance—icmtd.com, (2005), 67-70.
Hu, Hang, “A high performance MIM capacitor using HfO2 dielectrics”,IEEE Electron Device Letters, 23(9), 2002.
Ishikawa, Tsuyoshi, “High-Capacitance Cu/Ta2O5/Cu MIM Structure for SoC Applications Featuring a Single-Mask Add-on Process”,2002 International Electron Devices Meeting, (2002),940-942.
Lee, Sang-Yun, et al., “Atomic layer deposition of ZrO2on W for metal-insulator-metal capacitor application”,Applied Physics Letters, 82(17), (Apr. 28, 2003).
Lucovsky, Gerald , et al., “Asymmetries in the electrical activity of intrinsic grain-boundary and O-Atom vacancy defects in HFO2ZRO2at their interfaces with SIO2: a possible show stopper for CMOS high k devices”,IEEE SISC 2005, Dec. 1-3, Arlington VA, (2005).
Min, Jae-Sik, et al., “Metal-Organic Atomic-Layer Deposition of Titanium-Silicon-Nitride Films”,Applied Physics Letters, 75(11), (Sep. 13, 1999), 1521-1523.
Potter, Richard J., et al., “Deposition of HfO2, Gd2O3and PrOxby Liquid Injection ALD Techniques”,Chemical Vapor Deposition, 11(3), (2005), 159-169.
Schuisky, Mikael, “Atomic Layer Chemical Vapor Deposition of TiO2Low Temperature Epitaxy fo Rutile and Anatase”,Journal of the Electrochemical Society, 147(9), (2000),3319-3325.
Sneh, Ofer, “Thin film atomic layer deposition equipment for semiconductor processing”,Thin Solid Films, 402(1-2), (2002),248-261.
Wenger, C, et al., “First investigation of metal-insulator-metal (MIM) capacitor using Pr2O3dielectics”,Materials Science in Semiconductor Processing 7, (2004), 227-30.
Zurcher, P, et al., “Integration of Thin Film MIM Capacitors and Resistors Into Copper Metallization Based RF-CMOs and BI-CMOs Technologies”,International Electron Devices Meeting(IEDM), Technical Digest; San Francisco, CA; Dec. 10-13, 2000; New York, NY,(Dec. 10, 2000), 153-156.

Affiliated with

Also associated with

Rating

Capacitors and methods with praseodymium oxide insulators does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Capacitors and methods with praseodymium oxide insulators, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitors and methods with praseodymium oxide insulators will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4244244