Capacitors and methods of manufacture thereof

Details Capacitors and methods of manufacture thereof Capacitors and methods of manufacture thereof

2005-02-04

2010-12-14

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S261000, C438S393000, C438S396000

Reexamination Certificate

active

07851302

ABSTRACT:
Capacitors are formed in metallization layers of semiconductor device in regions where functional conductive features are not formed, more efficiently using real estate of integrated circuits. The capacitors may be stacked and connected in parallel to provide increased capacitance, or arranged in arrays. The plates of the capacitors are substantially the same dimensions as conductive features, such as conductive lines or vias, or are substantially the same dimensions as fill structures of the semiconductor device.

REFERENCES:
patent: 5077762 (1991-12-01), Morimoto et al.
patent: 6144051 (2000-11-01), Nishimura et al.
patent: 6159793 (2000-12-01), Lou
patent: 6620701 (2003-09-01), Ning
patent: 6677635 (2004-01-01), Ning et al.
patent: 6706588 (2004-03-01), Ning
patent: 6723600 (2004-04-01), Wong et al.
patent: 6794262 (2004-09-01), Ning et al.
patent: 2003/0143322 (2003-07-01), Ning
patent: 2005/0121744 (2005-06-01), Chang et al.
patent: 2006/0017115 (2006-01-01), Tu et al.

Affiliated with

Also associated with

Rating

Capacitors and methods of manufacture thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Capacitors and methods of manufacture thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitors and methods of manufacture thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4194314