Capacitorless DRAM and methods of operating the same

Details Capacitorless DRAM and methods of operating the same Capacitorless DRAM and methods of operating the same

2011-04-26

2011-04-26

Jackson, Jr., Jerome (Department: 2815)

Static information storage and retrieval

Systems using particular element

Capacitors

C257S401000, C257SE29274

Reexamination Certificate

active

07933143

ABSTRACT:
A capacitorless DRAM and methods of manufacturing and operating the same are provided. The capacitorless DRAM includes a source, a drain and a channel layer, formed on a substrate. A charge reserving layer is formed on the channel layer. The capacitorless DRAM includes a gate that contacts the channel layer and the charge reserving layer.

REFERENCES:
patent: 7317641 (2008-01-01), Scheuerlein
patent: 7514746 (2009-04-01), Tang et al.
patent: 2004/0042268 (2004-03-01), Bhattacharyya
patent: 2005/0062088 (2005-03-01), Houston
patent: 2005/0280028 (2005-12-01), Fazan et al.
patent: 2009/0016118 (2009-01-01), Widjaja et al.

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