Capacitorless DRAM and methods of manufacturing and...

Details Capacitorless DRAM and methods of manufacturing and... Capacitorless DRAM and methods of manufacturing and...

2008-05-22

2011-11-08

Gurley, Lynne (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257SE29001, C257SE21409, C257SE21646, C257SE27086, C438S197000, C438S257000, C365S184000

Reexamination Certificate

active

08053822

ABSTRACT:
Example embodiments provide a capacitorless dynamic random access memory (DRAM), and methods of manufacturing and operating the same. The capacitorless DRAM according to example embodiments may include a semiconductor layer separated from a top surface of a substrate and that contains a source region, a drain region, and a channel region, a charge reserving layer formed on the channel region, and a gate formed on the substrate to contact the channel region and the charge reserving layer.

REFERENCES:
patent: 2005/0017240 (2005-01-01), Fazan
patent: 2005/0260798 (2005-11-01), King
patent: 2007/0200178 (2007-08-01), Yun et al.
patent: 2009/0026519 (2009-01-01), Jin et al.

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