Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-03
2008-03-11
Pham, Thanh Van (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S218000, C438S508000, C257SE21632, C257SE21646
Reexamination Certificate
active
07341904
ABSTRACT:
A semiconductor device is fabricated by forming a trench in a semiconductor body. A region of dielectric material is formed within at least a lower portion of the trench. An upper portion of the semiconductor body is doped. A cutout is formed in the semiconductor material such that a vertical strip of semiconductor material remains along a sidewall of the dielectric material. A lower portion of the semiconductor body adjacent the sidewall of the dielectric material is doped. A gate dielectric layer is formed over the vertical strip of semiconductor material and a gate electrode is arranged in the cutout.
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Infineon - Technologies AG
Infineon Technologies Flash GmbH & Co. KG
Pham Thanh Van
Slater & Matsil L.L.P.
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