Capacitor with zirconium oxide and method for fabricating...

Details Capacitor with zirconium oxide and method for fabricating... Capacitor with zirconium oxide and method for fabricating...

2009-08-24

2011-11-22

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000, C438S785000, C257SE21664

Reexamination Certificate

active

08062943

ABSTRACT:
A capacitor with zirconium oxide and a method for fabricating the same are provided. The method includes: forming a storage node; forming a multi-layered dielectric structure on the storage node, the multi-layered dielectric structure including a zirconium oxide (ZrO2) layer and an aluminum oxide (Al2O3) layer; and forming a plate electrode on the multi-layered dielectric structure.

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