Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-22
2011-03-22
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S253000, C438S396000
Reexamination Certificate
active
07910428
ABSTRACT:
A capacitor includes a pillar-type storage node, a supporter filling an inner empty crevice of the storage node, a dielectric layer over the storage node, and a plate node over the dielectric layer.
REFERENCES:
patent: 11-017144 (1999-01-01), None
patent: 1020060018933 (2006-03-01), None
patent: 1020060069592 (2006-06-01), None
Do Kwan-Woo
Kil Deok-Sin
Kim Jin-Hyock
Kim Young-dae
Lee Kee-jeung
Brewster William M.
Hynix / Semiconductor Inc.
Kilpatrick Townsend & Stockton LLP
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