Capacitor that includes high permittivity capacitor dielectric

Details Capacitor that includes high permittivity capacitor dielectric Capacitor that includes high permittivity capacitor dielectric

2005-08-30

2005-08-30

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S071000, C257S296000, C257S300000, C257S508000, C257S532000, C257S905000, C257S908000

Reexamination Certificate

active

06936881

ABSTRACT:
A decoupling capacitor is formed on a semiconductor substrate that includes a silicon surface layer. A substantially flat bottom electrode is formed in a portion of the semiconductor surface layer. A capacitor dielectric overlies the bottom electrode. The capacitor dielectric is formed from a high permittivity dielectric with a relative permittivity, preferably greater than about 5. The capacitor also includes a substantially flat top electrode that overlies the capacitor dielectric. In the preferred application, the top electrode is connected to a first reference voltage line and the bottom electrode is connected to a second reference voltage line.

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