Capacitor structures, DRAM cell structures, methods of forming c

Details Capacitor structures, DRAM cell structures, methods of forming c Capacitor structures, DRAM cell structures, methods of forming c

1997-02-11

1999-05-18

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257298, 257301, 257304, 257309, H01L27/108

Patent

active

059052805

ABSTRACT:
The invention includes a construction comprising: a) an opening extending through an insulative layer to a node location; b) a conductive spacer within the opening and narrowing at least a portion of the opening; the conductive spacer having inner and outer surfaces; c) a storage node layer in connecting with the node location and extending along both of the inner and outer surfaces of the conductive spacer, the storage node layer and conductive spacer together forming a capacitor storage node; and d) a dielectric layer and a cell plate layer operatively proximate the storage node.

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