Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-01-26
1998-04-21
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438398, 148DIG138, H01L 218242
Patent
active
057417342
ABSTRACT:
A capacitor structure of a semiconductor device which includes a semiconductor substrate, a first metal layer formed on the substrate, and a second metal layer formed on the first metal layer. The first metal layer has a nitridation-treated film along its outer surface. A tungsten film having a rugged surface is formed on the entire outer surfaces of the first and second metal layers. Because of the nitridation-treated film along the first layer, the tungsten film will be uniformly distributed along the first and second metals. A thin dielectric film is then formed on the surface of the tungsten, followed by a third metal layer formed on the dielectric film.
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Chang Joni Y.
LG Semicon Co. Ltd.
Niebling John
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