Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-07-12
2005-07-12
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S306000, C257S307000, C257S308000, C438S239000
Reexamination Certificate
active
06916706
ABSTRACT:
A capacitor sheet includes a laminate sheet, interface-connection feedthrough conductors for electrically connecting faces of the laminate sheet, and capacitor-connection feedthrough conductors. The laminate sheet has at least one laminate which is composed of a power source layer electrode, a grounding layer electrode, and a dielectric layer interposed between the power source layer electrode and the grounding layer electrode. The interface-connection feedthrough conductors are formed in through holes that pass through the dielectric layer, the power source layer electrode, and the grounding layer electrode, and are insulated by insulation walls from the power source layer electrode and the grounding layer electrode provided inside. The capacitor-connection feedthrough conductors are formed in regions where only either the power source layer electrode or the grounding layer electrode is provided, and are connected electrically with either the power source layer electrode or the grounding layer electrode. This configuration makes the electric connection for employing the capacitors and the electric connection between faces of the sheet independent from each other. Thus, it is possible to provide a capacitor sheet in which the adverse effects of inductances of vias are minimized.
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Andoh Daizo
Echigo Fumio
Nakamura Tadashi
Hamre Schumann Mueller & Larson P.C.
Le Thao P.
Matsushita Electric Industrial Co Ltd.
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