Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-12-06
2000-10-24
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 257308, 257309, 257754, 257755, 257757, 257532, H01L 27108
Patent
active
061371300
ABSTRACT:
A method of creating a capacitor over bit line structure, used for high density, DRAM designs, has been developed. The process consists of creating a straight bit line shape, connected to an underlying polysilicon contact plug structure, which in turn contacts an underlying source and drain region. A storage node contact hole is opened through insulator layers and through the straight bit line shape. After passivation of the storage node contact hole with silicon nitride spacers, a storage node structure is formed on an overlying insulator layer, as well as in the storage node contact hole, overlying and contacting another polysilicon contact plug.
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Ackerman Stephen B.
Jr. Carl Whitehead
Saile George O.
Thomas Toniae M.
Vanguard International Semiconductor Corporation
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