Capacitor of semiconductor memory device that has composite...

Details Capacitor of semiconductor memory device that has composite... Capacitor of semiconductor memory device that has composite...

2005-05-24

2005-05-24

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

06897106

ABSTRACT:
A semiconductor memory device that includes a composite Al2O3/HfO2dielectric layer with a layer thickness ratio greater than or equal to 1, and a method of manufacturing the capacitor are provided. The capacitor includes a lower electrode, a composite dielectric layer including an Al2O3dielectric layer and an HfO2dielectric layer sequentially formed on the lower electrode, the Al2O3dielectric layer having a thickness greater than or equal to the HfO2dielectric layer, and an upper electrode formed on the composite dielectric layer. The Al2O3dielectric layer has a thickness of 30-60 Å. The HfO2dielectric layer has a thickness of 40 Å or less.

REFERENCES:
patent: 5440157 (1995-08-01), Imai et al.
patent: 5641702 (1997-06-01), Imai et al.
patent: 6287965 (2001-09-01), Kang et al.
patent: 6399491 (2002-06-01), Jeon et al.
patent: 6596583 (2003-07-01), Agarwal et al.
patent: 6599794 (2003-07-01), Kiyotoshi et al.
patent: 6617639 (2003-09-01), Wang et al.
patent: 6660631 (2003-12-01), Marsh
patent: 6660660 (2003-12-01), Kaukka et al.
patent: 6674138 (2004-01-01), Halliyal et al.
patent: 6682973 (2004-01-01), Paton et al.
patent: 6693004 (2004-02-01), Halliyal et al.
patent: 6703277 (2004-03-01), Paton et al.
patent: 20010024387 (2001-09-01), Raaijmakers et al.
patent: 20020115252 (2002-08-01), Haukka et al.
patent: P2001-0082118 (2001-08-01), None
patent: P2002-0002596 (2002-01-01), None
patent: P2002-0034520 (2002-05-01), None
English Language Abstract of Korean Publication No: P2001-0082118.
English Language Abstract of Korean Publication No: P2002-0002596.
English Language Abstract of Korean Publication No: P2002-0034520.

Affiliated with

Also associated with

Rating

Capacitor of semiconductor memory device that has composite... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Capacitor of semiconductor memory device that has composite..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor of semiconductor memory device that has composite... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3430565