Capacitor of semiconductor device and method of fabricating...

Details Capacitor of semiconductor device and method of fabricating... Capacitor of semiconductor device and method of fabricating...

2005-12-21

2008-10-28

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S308000, C257S305000, C257S306000, C438S057000, C438S622000

Reexamination Certificate

active

07442981

ABSTRACT:
Provided is a capacitor of a semiconductor device and a method of fabricating the same. In one embodiment, the capacitor includes a lower electrode formed on a semiconductor substrate; a dielectric layer formed on the lower electrode; and an upper electrode that is formed on the dielectric layer. The upper electrode includes a first conductive layer, a second conductive layer, and a third conductive layer stacked sequentially. The first conductive layer comprises a metal layer, a conductive metal oxide layer, a conductive metal nitride layer, or a conductive metal oxynitride layer. The second conductive layer comprises a doped polysilicon germanium layer. The third conductive layer comprises a material having a lower resistance than that of the second conductive layer.

REFERENCES:
patent: 6150706 (2000-11-01), Thakur et al.
patent: 6191443 (2001-02-01), Al-Shareef et al.
patent: 6696717 (2004-02-01), Chang et al.
patent: 2002/0123216 (2002-09-01), Yokoyama et al.
patent: 2005/0037598 (2005-02-01), Witvrouw
patent: 2003-0012733 (2003-02-01), None

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