Capacitor of a DRAM cell and method of making same

Details Capacitor of a DRAM cell and method of making same Capacitor of a DRAM cell and method of making same

1996-06-12

1999-03-09

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438397, H01L 218242

Patent

active

058799885

ABSTRACT:
A stacked capacitor of a DRAM cell has an increased storage electrode without increasing the total area and fabrication complexity of the DRAM cell. By disposing the storage electrode of a memory capacitor on an especially made rugged stacked oxide layer, the area of the storage electrode is enlarged and thus provides the higher capacitance. Then, by removing the rugged stacked oxide layer to expose the rugged surface of the storage electrode, the capacitance of a memory capacitor is additionally increased after covering the whole rugged surface of a of the storage electrode with a dielectric film.

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patent: 5286668 (1994-02-01), Chou
patent: 5422295 (1995-06-01), Choi
patent: 5622882 (1997-04-01), Yee
patent: 5661340 (1997-08-01), Ema et al.

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