Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-21
2006-03-21
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000
Reexamination Certificate
active
07015093
ABSTRACT:
An on-chip decoupling capacitor (106) and method of fabrication. The decoupling capacitor (106) is integrated at the top metal interconnect level (104) and includes surface protection layer (109) for the copper metal (104b) of the top metal interconnect.
REFERENCES:
patent: 6746914 (2004-06-01), Kai et al.
patent: 2004/0145855 (2004-07-01), Block et al.
Burke Edmund
Papa Rao Satyavolu S.
Rost Timothy A.
Brady III W. James
Dang Phuc T.
Garner Jacqueline J.
Telecky, Jr. Frecerick J.
Texas Instruments Incorporated
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