Capacitor in semiconductor device having dual dielectric...

Details Capacitor in semiconductor device having dual dielectric... Capacitor in semiconductor device having dual dielectric...

2005-11-15

2005-11-15

Schillinger, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S634000, C427S248100, C361S321400

Reexamination Certificate

active

06964900

ABSTRACT:
A capacitor in a semiconductor device having a dual dielectric film structure and a fabrication method therefor are disclosed. The capacitor comprises: a lower electrode formed on a semiconductor substrate, a dielectric film of a dual dielectric film structure composed of an Si3N4chloride-free thin film and a Ta2O5thin film, which is formed on the lower electrode, and an upper electrode formed on the dielectric film. Meanwhile, the method for fabricating the capacitor comprises the steps of: forming a lower electrode on a semiconductor substrate, forming a dielectric film of a dual dielectric film structure composed of an Si3N4thin film and a Ta2O5thin film on the lower electrode, and forming an upper electrode on the dielectric film.

REFERENCES:
patent: 4423087 (1983-12-01), Howard et al.
patent: 4471405 (1984-09-01), Howard et al.
patent: 5754390 (1998-05-01), Sandhu et al.
patent: 6075691 (2000-06-01), Duenas et al.
patent: 6222219 (2001-04-01), Gambino et al.
patent: 6555166 (2003-04-01), Gluschenkov et al.

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