Capacitor having reaction preventing layer and methods of...

Details Capacitor having reaction preventing layer and methods of... Capacitor having reaction preventing layer and methods of...

2005-05-17

2008-10-28

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000, C257S040000

Reexamination Certificate

active

07442982

ABSTRACT:
The present invention is directed to a capacitor having a reaction preventing layer and a method forming the same. A lower electrode of silicon is formed on a substrate. An assistance layer of metal oxide or metal nitride is formed on the lower electrode. A nitridation process is performed to enable the silicon of the lower electrode, the assistance layer, and nitrogen supplied by the nitridation process to react with one another, forming a reaction preventing layer comprising metal silicon oxynitride or metal silicon nitride. A high-k dielectric film and an upper electrode are formed on the reaction preventing layer.

REFERENCES:
patent: 5576579 (1996-11-01), Agnello et al.
patent: 5776823 (1998-07-01), Agnello et al.
patent: 5796166 (1998-08-01), Agnello et al.
patent: 6479364 (2002-11-01), Shin et al.
patent: 2001/0036708 (2001-11-01), Shin et al.
patent: 2005/0012089 (2005-01-01), Senzaki et al.
patent: 2005/0141168 (2005-06-01), Lee et al.
patent: 2005/0167723 (2005-08-01), Forbes et al.
patent: 08236479 (1996-09-01), None
patent: 1997-0053963 (1997-07-01), None
patent: 10-2001-0039874 (2001-05-01), None
patent: 10-2001-0045566 (2001-06-01), None
patent: 20010056976 (2001-07-01), None
patent: 20010059285 (2001-07-01), None
patent: 10-2002-0013189 (2002-02-01), None
patent: 20030003322 (2003-01-01), None

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