Capacitor having high electrostatic capacity, integrated...

Details Capacitor having high electrostatic capacity, integrated... Capacitor having high electrostatic capacity, integrated...

2007-02-16

2009-08-25

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S307000, C257S308000, C257S309000, C257S303000, C257S296000, C438S253000, C438S239000, C438S396000, C438S381000, C438S240000

Reexamination Certificate

active

07579643

ABSTRACT:
A capacitor may include a first electrode, a second electrode, a low dielectric layer, and/or a high dielectric layer. The first electrode may include at least one first electrode branch. The second electrode may face the first electrode and include at least one second electrode branch. The low dielectric layer may be formed between the first electrode branch and the second electrode branch. The high dielectric layer may be formed between the first electrode branch and the second electrode branch. The high dielectric layer may have a higher dielectric constant than the low dielectric layer.

REFERENCES:
patent: 6451667 (2002-09-01), Ning
patent: 2008/0173981 (2008-07-01), Chinthakindi et al.
patent: 2004-031860 (2004-01-01), None
patent: 1020050060401 (2005-06-01), None

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