Capacitor having electrodes at different depths to reduce...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C438S239000, C257S296000

Reexamination Certificate

active

07456463

ABSTRACT:
Capacitors are disclosed having reduced parasitic capacitance. In one embodiment, the capacitor includes a first set of electrodes, each electrode of the first set extending through at least one of a plurality of back-end-of-line (BEOL) layers above a substrate; a second set of electrodes, each electrode of the second set extending through at least one of the BEOL layers, and wherein each electrode of the second set extends to a greater depth of the plurality of BEOL layers than each electrode of the first set.

REFERENCES:
patent: 6251740 (2001-06-01), Johnson et al.
patent: 6342734 (2002-01-01), Allman et al.
patent: 6411419 (2002-06-01), Johnson et al.
patent: 6417535 (2002-07-01), Johnson et al.
patent: 6426249 (2002-07-01), Geffken et al.
patent: 6504202 (2003-01-01), Allman et al.
patent: 6822312 (2004-11-01), Sowlati et al.
patent: 6891219 (2005-05-01), Allman et al.
patent: 6964908 (2005-11-01), Hsu et al.
patent: 2004/0164339 (2004-08-01), Felsner et al.
patent: 2007/0158717 (2007-07-01), Edelstein et al.

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