Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-01
2005-03-01
Tran, Minh-Loan (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S253000, C438S396000, C257S306000, C257S310000
Reexamination Certificate
active
06861310
ABSTRACT:
A capacitor has a titanium nitride layer deposited on a silicon substrate for stress reduction and adherence promotion, and a layer of tantalum is deposited thereon. The tantalum layer is oxidized to produce a tantalum pentoxide layer. A top electrode of metal or polysilicon is then deposited on the tantalum pentoxide layer. The top electrode may be made from polysilicon or a similar semiconducting material so that a space charge layer will form in the electrode which will change the rate at which the capacitor charges and discharges. Alternatively, the top electrode may be made from metal to provide an optimal linear response for use in analog applications. Further, an undoped polysilicon layer may be provided above the tantalum pentoxide layer to store charge for non-volatile memory applications. For this purpose, polysilicon can be used to form the top electrode; alternatively, materials such as silicon nitride may be used.
REFERENCES:
patent: 5142438 (1992-08-01), Reinberg et al.
patent: 1 020 927 (2000-07-01), None
patent: 61145854 (1986-07-01), None
LSI Logic Corporation
Tran Minh-Loan
Trexler, Bushnell Giangiorgi, Blackstone & Marr, Ltd.
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