Capacitor formed on a recrystallized polysilicon layer

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S486000, C438S487000

Reexamination Certificate

active

08053296

ABSTRACT:
The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the semiconductor device. The semiconductor device, among other elements, includes a recrystallized polysilicon layer148located over a gate electrode layer143, a capacitor170located on the recrystallized polysilicon layer148. The capacitor170, in this embodiment, includes a first electrode173, an insulator175located over the first electrode173, and a second electrode178located over the insulator175.

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