Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2009-06-04
2011-11-08
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S486000, C438S487000
Reexamination Certificate
active
08053296
ABSTRACT:
The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the semiconductor device. The semiconductor device, among other elements, includes a recrystallized polysilicon layer148located over a gate electrode layer143, a capacitor170located on the recrystallized polysilicon layer148. The capacitor170, in this embodiment, includes a first electrode173, an insulator175located over the first electrode173, and a second electrode178located over the insulator175.
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Bu Haowen
Lu Jiong-Ping
Montgomery Clint
Brady III Wade J.
Franz Warren L.
Picardat Kevin M
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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