Capacitor for semiconductor device, manufacturing method...

Details Capacitor for semiconductor device, manufacturing method... Capacitor for semiconductor device, manufacturing method...

2006-09-12

2006-09-12

Nadav, Ori (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S650000, C438S686000

Reexamination Certificate

active

07105401

ABSTRACT:
A capacitor for use in a semiconductor device, a method of fabricating the capacitor, and an electronic device adopting the capacitor, wherein the capacitor includes upper and lower electrodes, each formed of a platinum group metal; a thin dielectric layer disposed between the upper and lower electrodes; and a buffer layer disposed between the lower electrode and the thin dielectric layer, the buffer layer including a metal oxide of Group 3, 4, or 13. In an embodiment, the method of fabricating includes absorbing CO on a surface of a lower electrode of a platinum group metal, placing the lower electrode under a reducing atmosphere to produce a lattice oxygen, using the lattice oxygen to form a thin dielectric layer by performing an ALD process using a precursor for the thin dielectric layer, and forming an upper electrode of a platinum group metal on the thin dielectric layer.

REFERENCES:
patent: 6144069 (2000-11-01), Tung
patent: 6162293 (2000-12-01), Kijima et al.
patent: 2002/0001858 (2002-01-01), Kim et al.
patent: 2002/0074584 (2002-06-01), Yang
patent: 0 540 994 (1993-05-01), None
patent: 1999-0080412 (1999-11-01), None
patent: 2002-0013189 (2002-02-01), None
Patent Abstracts of Japan, vol. 0182, No. 13 (E-1538), Apr. 15, 1994 & JP 6-013542 (Pub. Date:Jan. 21, 1994).
*Entitled: “Engineered Tantalum Aluminate and Hafnium Aluminate and Films for Ultrathin . . . ”.
**Entitled: “High-kappa Gate Dielectrics: Current Status and Materials Properties Considerations”.
***Entitled: “Common and Unique Aspects of Perovskite Thin Film CVD Processes”.

Affiliated with

Also associated with

Rating

Capacitor for semiconductor device, manufacturing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Capacitor for semiconductor device, manufacturing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor for semiconductor device, manufacturing method... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3558377