Capacitor for integrated circuit and its fabrication method

Details Capacitor for integrated circuit and its fabrication method Capacitor for integrated circuit and its fabrication method

1995-12-15

1999-07-27

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257310, H01L 2976, H01L 31062, H01L 27108

Patent

active

059294752

ABSTRACT:
A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region of the titanium film so as to change titanium in the surface region to titanium dioxide, and forming a high dielectric constant capacitor on the titanium dioxide film.

REFERENCES:
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patent: 5555486 (1996-09-01), Kingon et al.
patent: 5561307 (1996-10-01), Mihara et al.
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patent: 5625233 (1997-04-01), Cabral, Jr. et al.
patent: 5679969 (1997-10-01), Evan, Jr. et al.
Patent Abstracts of Japan, vol. 13, No. 218 (E-761) May 22, 1989.
Patent Abstracts of Japan, vol. 8, No. 239 (E-276) Nov. 2, 1984.

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