Capacitor for high performance system-on-chip using post...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S471000, C257S759000, C257S773000

Reexamination Certificate

active

06897507

ABSTRACT:
The present invention extends the above referenced continuation-in-part application by in addition creating high quality electrical components, such as inductors, capacitors or resistors, on a layer of passivation or on the surface of a thick layer of polymer. In addition, the process of the invention provides a method for mounting discrete electrical components at a significant distance removed from the underlying silicon surface.

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Kuchoulkov et al., “Patterning of Polyimide and Metal in Deep Trenches”, Physical 2001, A92, pp. 208-213.

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