Capacitor fabrication method

Details Capacitor fabrication method Capacitor fabrication method

2011-05-31

2011-05-31

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S765000, C438S775000

Reexamination Certificate

active

07951727

ABSTRACT:
The nitride film forming method comprises the first step of loading a semiconductor substrate12into a reaction furnace, and decompressing the inside of the reaction furnace14to remove oxygen and water from the inside of the reaction furnace14and the semiconductor substrate12, the second step of heating the reaction furnace14to further remove the oxygen and the water from the reaction furnace14and the semiconductor substrate12, and the third step of purifying nitrogen gas to have the oxygen concentration to be 1 ppb or below, and performing thermal processing with the purified nitrogen gas being fed into the reaction furnace to form a nitride film56over the semiconductor substrate12. The thermal nitriding is performed using an ultrahigh-purity nitrogen gas of an oxygen concentration of 1 ppb or below, whereby nitrogen film of very good quality can be formed without setting the thermal processing temperature very high.

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