Capacitor dielectric structure of a DRAM cell and method for...

Details Capacitor dielectric structure of a DRAM cell and method for... Capacitor dielectric structure of a DRAM cell and method for...

2006-04-18

2006-04-18

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257S303000

Reexamination Certificate

active

07030441

ABSTRACT:
A capacitor dielectric structure of a deep trench capacitor for a DRAM cell is disclosed. A semiconductor silicon substrate is provided with a deep trench. Silicon nitride deposition is used to form a silicon nitride layer on the sidewall and bottom of the deep trench. An oxynitride process with wet oxidation and N2O reactive gas is used to form an oxynitride layer on the silicon nitride layer. A post oxynitride growth annealing is performed on the oxynitride layer.

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