Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-03
2005-05-03
Chaudhari, Chandra (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S310000
Reexamination Certificate
active
06888188
ABSTRACT:
The invention includes a capacitor construction. A capacitor electrode has a perovskite-type dielectric material thereover. The perovskite-type dielectric material has an edge region proximate the electrode, and a portion further from the electrode than the edge region. The portion has a different amount of crystallinity than the edge region. The invention also includes a method of forming a capacitor construction. A capacitor electrode is provided, and a perovskite-type dielectric material is chemical vapor deposited over the first capacitor electrode. The depositing includes flowing at least one metal organic precursor into a reaction chamber and forming a component of the perovskite-type dielectric material from the precursor. The precursor is exposed to different oxidizing conditions during formation of the perovskite-type dielectric material so that a first region of the dielectric material has more amorphous character than a second region of the dielectric material.
REFERENCES:
patent: 4105810 (1978-08-01), Yamazaki et al.
patent: 4261698 (1981-04-01), Carr et al.
patent: 4691662 (1987-09-01), Roppel et al.
patent: 5006363 (1991-04-01), Fujii et al.
patent: 5164363 (1992-11-01), Eguchi et al.
patent: 5183510 (1993-02-01), Kimura
patent: 5254505 (1993-10-01), Kamiyama
patent: 5256455 (1993-10-01), Numasawa
patent: 5261961 (1993-11-01), Takasu et al.
patent: 5270241 (1993-12-01), Dennison et al.
patent: 5312783 (1994-05-01), Takasaki et al.
patent: 5392189 (1995-02-01), Fazan et al.
patent: 5395771 (1995-03-01), Nakato
patent: 5459635 (1995-10-01), Tomozawa et al.
patent: 5468687 (1995-11-01), Carl et al.
patent: 5470398 (1995-11-01), Shibuya et al.
patent: 5525156 (1996-06-01), Manada et al.
patent: 5596214 (1997-01-01), Endo
patent: 5614018 (1997-03-01), Azuma et al.
patent: 5618761 (1997-04-01), Eguchi et al.
patent: 5635741 (1997-06-01), Tsu et al.
patent: 5656329 (1997-08-01), Hampden-Smith
patent: 5663089 (1997-09-01), Tomozawa et al.
patent: 5702562 (1997-12-01), Wakahara
patent: 5711816 (1998-01-01), Kirlin et al.
patent: 5719417 (1998-02-01), Roeder et al.
patent: 5723361 (1998-03-01), Azuma et al.
patent: 5731948 (1998-03-01), Yializis et al.
patent: 5736759 (1998-04-01), Haushalter
patent: 5776254 (1998-07-01), Yuuki et al.
patent: 5783253 (1998-07-01), Roh
patent: 5798903 (1998-08-01), Dhote et al.
patent: 5834060 (1998-11-01), Kawahara et al.
patent: 5909043 (1999-06-01), Summerfelt
patent: 5972430 (1999-10-01), DiMeo, Jr. et al.
patent: 5976990 (1999-11-01), Mercaldi et al.
patent: 5989927 (1999-11-01), Yamanobe
patent: 6025222 (2000-02-01), Kimura et al.
patent: 6037205 (2000-03-01), Huh et al.
patent: 6043526 (2000-03-01), Ochiai
patent: 6046345 (2000-04-01), Kadokura et al.
patent: 6078492 (2000-06-01), Huang et al.
patent: 6090443 (2000-07-01), Eastep
patent: 6101085 (2000-08-01), Kawahara et al.
patent: 6126753 (2000-10-01), Shinriki et al.
patent: 6127218 (2000-10-01), Kang
patent: 6143679 (2000-11-01), Nagasawa et al.
patent: 6146907 (2000-11-01), Xiang et al.
patent: 6150684 (2000-11-01), Sone
patent: 6153898 (2000-11-01), Watanabe et al.
patent: 6156638 (2000-12-01), Agarwal et al.
patent: 6165834 (2000-12-01), Agarwal et al.
patent: 6211096 (2001-04-01), Allman et al.
patent: 6215650 (2001-04-01), Gnade et al.
patent: 6236076 (2001-05-01), Arita et al.
patent: 6238734 (2001-05-01), Senzaki et al.
patent: 6245652 (2001-06-01), Gardner et al.
patent: 6258170 (2001-07-01), Somekh et al.
patent: 6258654 (2001-07-01), Gocho
patent: 6277436 (2001-08-01), Stauf et al.
patent: 6285051 (2001-09-01), Ueda et al.
patent: 6287935 (2001-09-01), Coursey
patent: 6323057 (2001-11-01), Sone
patent: 6325017 (2001-12-01), DeBoer et al.
patent: 6326068 (2001-12-01), Summerfelt et al.
patent: 6335049 (2002-01-01), Basceri
patent: 6335302 (2002-01-01), Satoh et al.
patent: 6337496 (2002-01-01), Jung
patent: 6338970 (2002-01-01), Suh
patent: 6362068 (2002-03-01), Summerfelt et al.
patent: 6372686 (2002-04-01), Golden
patent: 6422281 (2002-07-01), Ensign, Jr. et al.
patent: 6500487 (2002-12-01), Holst et al.
patent: 6507060 (2003-01-01), Ren et al.
patent: 6527028 (2003-03-01), Miller
patent: 6566147 (2003-05-01), Basceri et al.
patent: 6602376 (2003-08-01), Bradshaw
patent: 20020197793 (2002-12-01), Dorofest et al.
patent: 20030017266 (2003-01-01), Basceri et al.
patent: 0 030 798 (1981-06-01), None
patent: 0 306 069 (1989-03-01), None
patent: 0 388 957 (1990-09-01), None
patent: 0 474 140 (1991-08-01), None
patent: 0 474 140 (1992-03-01), None
patent: 0 810 666 (1997-12-01), None
patent: 0 835 950 (1998-04-01), None
patent: 0 855 735 (1998-07-01), None
patent: 0 892 426 (1999-01-01), None
patent: 0 957 522 (1999-11-01), None
patent: 2 194 555 (1988-03-01), None
patent: 2250970 (1990-10-01), None
patent: 04-24922 (1992-01-01), None
patent: 04-115533 (1992-04-01), None
patent: 04-180566 (1992-06-01), None
patent: 08-060347 (1996-03-01), None
patent: 2000091333 (2000-03-01), None
patent: WO 9839497 (1998-09-01), None
patent: WO 9964645 (1999-12-01), None
patent: WO 0116395 (2001-03-01), None
Dissertation: Basceri, Cem, “Electrical and Dielectric Properties of (Ba,Sr)TiO, Thin Film Capacitors for Ultra-High Density Dynamic Random Access Memories”, 1997, 171 pgs.
U.S. Appl. No. 09/905,286, filed Jul. 13, 2001, inventor C. Basceri et al.
Steve Bilodeau et al.,Composition Dependence of the Dielectric Properties of MOCVD BaxSr1-xTiO3, pp. 1-21 (MRS Fall Meeting Dec. 1, 1994).
Steve M. Bilodeau et al.,MOCVD BST for High Density DRAM Applications(Preprint for SEMICON/WEST Jul. 12, 1995), 2 pages.
Y-C Choi et al., Abstract,Improvements of the Properties of Chemical-Vapor-Deposited(Ba,Sr)TiO , Films Through Use of a Seed Layer, 36 J PN. J. Appl. Phys. Pt. 1, No. 11, pp. 6824-6828 (1997).
Chung Ming Chu et al., Abstract,Electrical properties and crystal structure of(Ba,Sr)TiO3films prepared at low temperatures on a LaNiO3electrode by radio-frequency magnetron. . . , 70 A pplied Physics Letters No. 2, pp. 249-251 (1997).
Kazuhiro Eguchi et al., Abstract,Chemical vapor deposition of(Ba,Sr)TiO3thin films for application in gigabit scale dynamic random access memories, 141 Integrated Ferroelectrics No. 1-4, Pt. 1, pp. 33-42 (1997).
Q.X. Jia et al., Abstract,Structural and dielectric properties of Baa3Sr3thin films with an epi-RuO2bottom electrode, 191 Integrated Ferroelectrics No. 1-4, pp. 111-119 (1998).
Takaaki Kawahara et al., (Ba, Sr)TiO3Films Prepared by Liquid Source Chemical Vapor Deposition on Ru Electrodes, 35 J Pn. J. Appl. Phys. Pt. 1, No. 9B, pp. 4880, 4883 (1996).
Rajesh Khamankar et al.,A Novel Low-Temperature Process for High Dielectric Constant BST Thin Films for ULSI DRAM Applications, Microelectronics Research Center, Univ. of Texas at Austin, TX (Undated), 2 pages.
Yong Tae Kim et al., Abstract,Advantages of RuO2bottom electrode in the dielectric and leakage characteristics of(Ba,Sr)TiO3capacitor, 35 J Pn. J. Appl. Phys. Pt. 1, No. 12A, pp. 6153-6156 (1996).
S.H. Pack et al., Abstract,Characterization of MIS capacitor of BST thin films deposited on Si by RF magnetron sputteringFerroelectric Thin Films V. Symposium, San Francisco, CA, pp. 33-38 (Apr. 7, 1995).
N. Takeuchi et al., Abstract,Effect of firing atmosphere on the cubic-hexogonal transition in Baa99Sr.01TiO3, 98 N Ippon Seramikkusu Kyokai Gakujutsu Ronbunshi No. 8, pp. 836-839 (1990).
H. Yamaguchi, et al., Abstract,Reactive coevaporation synthesis and characterization of SrTiO3-BaTiO3thin films, IEEE International Symposium on Applications of Ferroelectrics, Greenville, SC, pp. 285-288 (Aug. 2, 1992).
S. Yamamichi et al., Abstract,Ba+Sr/Ti ratio dependence of the dielectric properties for(Ba0.3)Sra3TiO3thin films prepared by ion beam sputtering, 64 A pplied Physics Letters No. 13, pp. 1644-1646 (1994).
M. Yamamuka et al., Abstract,Thermal-Desorption Spectroscopy of(Ba,Sr)TiO3Thin-Films Prepared by Chemical-Vapor-Deposition35 J PN. J. of Appl. Phys. Pt. 1, No. 2A, pp. 729-735 (1996).
Arai T., et al.: “Preparation of SrTiO3Films on 8-Inch Wafers . . . ” Jap. Journal of Applied Physics
Chaudhari Chandra
Micro)n Technology, Inc.
Wells St. John P.S.
LandOfFree
Capacitor constructions comprising perovskite-type... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Capacitor constructions comprising perovskite-type..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor constructions comprising perovskite-type... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3403137