Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-29
2008-07-29
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S301000, C257S303000, C257S309000, C257S532000
Reexamination Certificate
active
10945774
ABSTRACT:
The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the first semiconductor layer. Subsequently, a third semiconductor layer is formed over the second semiconductor layer, and semiconductor-containing seeds are formed over the third semiconductor layer. The seeds are annealed to form the rugged semiconductor-containing surface. The first, second and third semiconductor layers are part of a common stack, and can be together utilized within a storage node of a capacitor construction. The invention also includes semiconductor structures comprising rugged surfaces. The rugged surfaces can be, for example, rugged silicon.
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Blalock Guy T.
Breiner Lyle D.
Chen Shenlin
Doan Trung Tri
Ping Er-Xuan
Micro)n Technology, Inc.
Wells St. John P.S.
Wojciechowicz Edward
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