Capacitor constructions and rugged silicon-containing surfaces

Details Capacitor constructions and rugged silicon-containing surfaces Capacitor constructions and rugged silicon-containing surfaces

2008-01-22

2008-01-22

Nguyen, Tuan H. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S309000

Reexamination Certificate

active

10913275

ABSTRACT:
The invention encompasses a method of forming a rugged silicon-containing surface. A layer comprising amorphous silicon is provided within a reaction chamber at a first temperature. The temperature is increased to a second temperature at least 40° C. higher than the first temperature while flowing at least one hydrogen isotope into the chamber. After the temperature reaches the second temperature, the layer is seeded with seed crystals. The seeded layer is then annealed to form a rugged silicon-containing surface. The rugged silicon-containing surface can be incorporated into a capacitor construction. The capacitor construction can be incorporated into a DRAM cell, and the DRAM cell can be utilized in an electronic system.

REFERENCES:
patent: 5519238 (1996-05-01), Lu
patent: 5726085 (1998-03-01), Crenshaw et al.
patent: 5804481 (1998-09-01), Tseng
patent: 5910019 (1999-06-01), Watanabe et al.
patent: 5930625 (1999-07-01), Lin et al.
patent: 5989969 (1999-11-01), Watanabe et al.
patent: 6025280 (2000-02-01), Brady et al.
patent: 6143620 (2000-11-01), Sharan et al.
patent: 6204120 (2001-03-01), Gilboa et al.
patent: 6281138 (2001-08-01), Brady et al.
patent: 6335242 (2002-01-01), Yamazaki
patent: 6399439 (2002-06-01), Yamanishi et al.
patent: 6436761 (2002-08-01), Harada et al.
patent: 2003/0129807 (2003-07-01), Ping et al.
patent: 2001-358317 (2001-12-01), None
patent: 0221755 (1999-11-01), None
patent: US2004/027899 (2004-08-01), None

Affiliated with

Also associated with

Rating

Capacitor constructions and rugged silicon-containing surfaces does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Capacitor constructions and rugged silicon-containing surfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor constructions and rugged silicon-containing surfaces will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3931399