Capacitor constructions

Details Capacitor constructions Capacitor constructions

2007-09-25

2007-09-25

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S311000, C257S309000, C257S317000, C257S306000, C257SE31004, C438S254000, C438S255000

Reexamination Certificate

active

10841686

ABSTRACT:
The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is formed to extend across the at least partially dissociated layer and within the gaps. The electrically conductive surface has a rugged topography imparted by the at least partially dissociated layer and the gaps. The topographically rugged surface can be incorporated into capacitor constructions. The capacitor constructions can be incorporated into DRAM cells, and such DRAM cells can be incorporated into electrical systems.

REFERENCES:
patent: 5700710 (1997-12-01), Zenke
patent: 6236080 (2001-05-01), Lou
patent: 6524927 (2003-02-01), Sugawara et al.
patent: 6723613 (2004-04-01), Huang
patent: 6753618 (2004-06-01), Basceri et al.
patent: 6815753 (2004-11-01), Sandhu
patent: 2001/0012656 (2001-08-01), Rhodes et al.
patent: 2002/0043681 (2002-04-01), Tsu et al.
patent: 2003/0129807 (2003-07-01), Ping et al.

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