Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-31
2006-10-31
Lee, Hsien-Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S303000, C257S306000, C257S310000, C438S239000, C438S240000, C438S387000
Reexamination Certificate
active
07129535
ABSTRACT:
The invention includes methods in which metal oxide dielectric materials are deposited over barrier layers. The barrier layers can comprise compositions of metal and one or more of carbon, boron and nitrogen, and the metal oxide of the dielectric material can comprise the same metal as the barrier layer. The dielectric material/barrier layer constructions can be incorporated into capacitors. The capacitors can be used in, for example, DRAM cells, which in turn can be used in electronic systems.
REFERENCES:
patent: 3988824 (1976-11-01), Bodway
patent: 4464701 (1984-08-01), Roberts et al.
patent: 4733328 (1988-03-01), Blazej
patent: 5508881 (1996-04-01), Stevens
patent: 5509558 (1996-04-01), Imai et al.
patent: 5621607 (1997-04-01), Farahmandi et al.
patent: 5741721 (1998-04-01), Stevens
patent: 5777428 (1998-07-01), Farahmandi et al.
patent: 5922411 (1999-07-01), Shimizu et al.
patent: 6059847 (2000-05-01), Farahmandi et al.
patent: 6077774 (2000-06-01), Hong et al.
patent: 6107136 (2000-08-01), Melnick et al.
patent: 6153872 (2000-11-01), Hagmann et al.
patent: 6340827 (2002-01-01), Choi et al.
patent: 6387748 (2002-05-01), Agarwal
patent: 6451661 (2002-09-01), DeBoer et al.
patent: 6461914 (2002-10-01), Roberts et al.
patent: 6476454 (2002-11-01), Suguro
patent: 2001/0039085 (2001-11-01), Agarwal
patent: 2001/0053576 (2001-12-01), DeBoer et al.
patent: 2002/0030191 (2002-03-01), Das et al.
patent: 2002/0079531 (2002-06-01), Al-Shareef et al.
patent: 2002/0115252 (2002-08-01), Haukka et al.
patent: 2002/0164852 (2002-11-01), Forbes et al.
patent: 2003/0060003 (2003-03-01), Hecht et al.
patent: 2003/0148627 (2003-08-01), Aoki et al.
patent: 0 671 765 (1995-09-01), None
patent: 0 862 203 (1998-09-01), None
patent: 1 035 564 (2000-09-01), None
patent: WO 02/031875 (2002-04-01), None
patent: WO 02/031875 (2002-04-01), None
patent: 2004/013963 (2004-05-01), None
Basceri Cem
Gealy F. Daniel
Sandhu Gurtej S.
Lee Hsien-Ming
Micro)n Technology, Inc.
Wells St. John P.S.
LandOfFree
Capacitor constructions does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Capacitor constructions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor constructions will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3672353