Capacitor constructions

Details Capacitor constructions Capacitor constructions

2006-10-31

2006-10-31

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S303000, C257S306000, C257S310000, C438S239000, C438S240000, C438S387000

Reexamination Certificate

active

07129535

ABSTRACT:
The invention includes methods in which metal oxide dielectric materials are deposited over barrier layers. The barrier layers can comprise compositions of metal and one or more of carbon, boron and nitrogen, and the metal oxide of the dielectric material can comprise the same metal as the barrier layer. The dielectric material/barrier layer constructions can be incorporated into capacitors. The capacitors can be used in, for example, DRAM cells, which in turn can be used in electronic systems.

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