Capacitor construction with oxidation barrier blocks

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

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Details

3613214, 438 3, H01L 2170, H01G 406

Patent

active

056542240

ABSTRACT:
A method of forming a capacitor apparatus includes providing a substrate having a node, providing an electrically conductive reaction barrier layer with opposed recessed lateral edges over the substrate node, forming an inner capacitor plate, providing oxidation barrier blocks over the opposed recessed lateral edges, forming a dielectric layer and providing an outer capacitor plate.

REFERENCES:
patent: 5371700 (1994-12-01), Hamada
patent: 5381302 (1995-01-01), Sandhu et al.
patent: 5392189 (1995-02-01), Fazan et al.

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