Semiconductor device having an ohmic contact and a Schottky cont

Details Semiconductor device having an ohmic contact and a Schottky cont Semiconductor device having an ohmic contact and a Schottky cont

1998-12-02

2000-01-04

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257281, 257751, 257764, 257770, H01L 310328

Patent

active

060112816

ABSTRACT:
A semiconductor device includes an ohmic electrode and a Schottky electrode respectively carrying interconnection patterns with intervening adhesion layer and a diffusion barrier layer, wherein the Schottky electrode further includes a metal layer that prevents a reaction between the Schottky electrode and the diffusion barrier layer such that the metal layer is interposed between the top surface of the Schottky electrode and adhesion layer for increasing the distance between the diffusion barrier layer and the Schottky electrode.

REFERENCES:
patent: 5811843 (1998-09-01), Yamamoto et al.

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