Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-12
2011-07-12
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S301000, C257S302000, C257S303000, C257S304000, C257S305000, C257S307000, C257S758000, C257SE21646, C257SE27084, C257SE27087
Reexamination Certificate
active
07977724
ABSTRACT:
A capacitor includes a cylindrical storage electrode formed on a substrate. A ring-shaped stabilizing member encloses an upper portion of the storage electrode to structurally support the storage electrode and an adjacent storage electrode. The ring-shaped stabilizing member is substantially perpendicular to the storage electrode and extends in a direction where the adjacent storage electrode is arranged. A dielectric layer is formed on the storage electrode. A plate electrode is formed on the dielectric layer.
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patent: 6667502 (2003-12-01), Agarwal et al.
patent: 7067385 (2006-06-01), Manning
patent: 2003/0085420 (2003-05-01), Ito et al.
patent: 2003/0136996 (2003-07-01), Park et al.
patent: 2003/0178728 (2003-09-01), Park et al.
patent: 2003/0227044 (2003-12-01), Park
patent: 2005/0051822 (2005-03-01), Manning
patent: 2004-0000069 (2004-01-01), None
English language abstract of Korean Publication No. 2004-0000069.
Chen David Z
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
Warren Matthew E
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