Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-11-27
2007-11-27
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21649
Reexamination Certificate
active
11116999
ABSTRACT:
A capacitor includes a cylindrical storage electrode formed on a substrate. A ring-shaped stabilizing member encloses an upper portion of the storage electrode to structurally support the storage electrode and an adjacent storage electrode. The ring-shaped stabilizing member is substantially perpendicular to the storage electrode and extends in a direction where the adjacent storage electrode is arranged. A dielectric layer is formed on the storage electrode. A plate electrode is formed on the dielectric layer.
REFERENCES:
patent: 2003/0085420 (2003-05-01), Ito et al.
patent: 2003/0136996 (2003-07-01), Park
patent: 2003/0178728 (2003-09-01), Park et al.
patent: 2003/0227044 (2003-12-01), Park
patent: 2004-0000069 (2004-01-01), None
English language abstract of Korean Publication No. 2004-0000069.
Chaudhari Chandra
Marger & Johnson & McCollom, P.C.
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