Capacitor and method of manufacturing a capacitor

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C257SE21582

Reexamination Certificate

active

07615440

ABSTRACT:
In a method of fabricating a semiconductor device, a level of metal is formed within an interval dielectric. The level of metal includes a first metal line separated from a second metal line by a region of the interlevel dielectric. The region of interlevel dielectric is removed between the first metal line and the second metal line. A high-k dielectric is formed between the first metal line and the second metal line in the region where the interlevel dielectric was removed such that a capacitor is formed by the first metal line, the second metal line and the high-k dielectric.

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