Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-09-07
2009-11-10
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21582
Reexamination Certificate
active
07615440
ABSTRACT:
In a method of fabricating a semiconductor device, a level of metal is formed within an interval dielectric. The level of metal includes a first metal line separated from a second metal line by a region of the interlevel dielectric. The region of interlevel dielectric is removed between the first metal line and the second metal line. A high-k dielectric is formed between the first metal line and the second metal line in the region where the interlevel dielectric was removed such that a capacitor is formed by the first metal line, the second metal line and the high-k dielectric.
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Barth Hans-Joachim
Felsner Petra
Kaltalioglu Erdem
Kerst Uwe
Schafbauer Thomas
Chaudhari Chandra
Infineon - Technologies AG
Slater & Matsil L.L.P.
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