Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-06-28
2005-06-28
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C361S302000, C361S306100, C438S396000, C438S398000
Reexamination Certificate
active
06911365
ABSTRACT:
A capacitor19comprises a lower electrode14formed on a substrate10, an upper electrode18opposed to the lower electrode, and a capacitor dielectric film16formed between the lower electrode and the upper electrode, in which at least one of the lower electrode and the upper electrodes is an electrode of a metal substituted layer. The lower electrodes of polysilicon are formed, and then after the high-temperature heat processing for improving film quality of the capacitor dielectric film has been performed, the lower electrodes of polysilicon is substituted with aluminum to form the lower electrodes of aluminum, whereby aluminum, which cannot withstand the heat processing for improving film quality of the capacitor dielectric film can be used as a material of the lower electrodes. Thus, capacitors having good high-speed response can be formed.
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Fujitsu Limited
Nelms David
Nguyen Dao H.
Westerman Hattori Daniels & Adrian LLP
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