Capacitor and method for fabricating the same

Details Capacitor and method for fabricating the same Capacitor and method for fabricating the same

2007-12-11

2007-12-11

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S393000, C257SE27048

Reexamination Certificate

active

11319482

ABSTRACT:
A capacitor structure and a method of fabricating the capacitor structure wherein. The lower electrode and the upper electrode are constructed to be separated from each other by a predetermined interval and to be engaged with each other using a series of alternating ridges so that an effective surface area can increase within a limited area.

REFERENCES:
patent: 5744387 (1998-04-01), Tseng

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