Capacitor and manufacturing method thereof, semiconductor...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S250000, C438S099000, C438S171000, C438S210000

Reexamination Certificate

active

11048556

ABSTRACT:
A capacitor includes a capacitor part formed of a dielectric film sandwiched by a pair of electrodes and a support body formed of a film of an organic polysilane. The support body is provided so as to support the capacitor part thereon.

REFERENCES:
patent: 6015596 (2000-01-01), Miwa et al.
patent: 6589644 (2003-07-01), Yamada et al.
patent: 6737118 (2004-05-01), Yamada et al.
patent: 2001/0012896 (2001-08-01), Henton et al.
patent: 2001/0013425 (2001-08-01), Rokugawa et al.
patent: 2003/0089954 (2003-05-01), Sashida
patent: 08-017726 (1996-01-01), None
patent: 09-008175 (1997-01-01), None
patent: 09-148746 (1997-06-01), None
patent: 11-026444 (1999-01-01), None
patent: 2000-138442 (2000-05-01), None
patent: 2001 274034 (2001-10-01), None
patent: 2002-223077 (2002-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Capacitor and manufacturing method thereof, semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Capacitor and manufacturing method thereof, semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor and manufacturing method thereof, semiconductor... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3727526

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.