Capacitor and fabrication method thereof

Details Capacitor and fabrication method thereof Capacitor and fabrication method thereof

2006-10-17

2006-10-17

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S240000, C438S250000, C438S253000

Reexamination Certificate

active

07122419

ABSTRACT:
A fabrication of a capacitor in a semiconductor is simplified by using nitrogen plasma in forming an aluminum nitride layer functioning as an insulation layer on the aluminum layer disposed in a capacitor region. Subsequently, a planarized IMD (inter-metal dielectric) layer is obtained, facilitating via etching process.

REFERENCES:
patent: 5851896 (1998-12-01), Summerfelt
patent: 6015990 (2000-01-01), Hieda et al.
patent: 2002/0164852 (2002-11-01), Forbes et al.
patent: 2002/0190814 (2002-12-01), Yamada et al.
patent: 01218054 (1989-08-01), None

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