Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2011-06-07
2011-06-07
Lund, Jeffrie R (Department: 1716)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S005000, C438S010000, C438S732000, C438S758000, C427S569000, C427S571000, C427S589000, C216S067000, C156S345280, C156S345460, C156S345490, C118S7230AN, C118S7230ER, C118S7230IR
Reexamination Certificate
active
07955986
ABSTRACT:
A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
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Barnes Michael
Chae Heeyeop
Hoffman Daniel J.
Ishikawa Tetsuya
Miller Matthew L.
Applied Materials Inc.
Lund Jeffrie R
Wallace Robert M.
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