Capacitive probe for in situ measurement of wafer DC bias voltag

Electricity: measuring and testing – Testing potential in specific environment – Voltage probe

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Details

324765, 3241581, 438 14, 438 17, G01R 31265, H01L 2166

Patent

active

059428899

ABSTRACT:
Apparatus and a concomitant method for estimating voltage on a wafer located in a process chamber. A probe, attached externally to a wall of the process chamber, detects voltage levels generated by a plasma within said process chamber. A relationship between the detected plasma voltage level and the wafer voltage is determined.

REFERENCES:
patent: 4358686 (1982-11-01), Kinoshita
patent: 4859908 (1989-08-01), Yoshida et al.
patent: 5451884 (1995-09-01), Sauerland
patent: 5557215 (1996-09-01), Saeki et al.
patent: 5667701 (1997-09-01), Sato et al.
patent: 5810963 (1998-09-01), Tomioka

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