Capacitive probe for in situ measurement of wafer DC bias voltag

Details Capacitive probe for in situ measurement of wafer DC bias voltag Capacitive probe for in situ measurement of wafer DC bias voltag

1997-06-20

1999-08-24

Brown, Glenn W.

Electricity: measuring and testing

Testing potential in specific environment

Voltage probe

324765, 3241581, 438 14, 438 17, G01R 31265, H01L 2166

Patent

active

059428899

ABSTRACT:
Apparatus and a concomitant method for estimating voltage on a wafer located in a process chamber. A probe, attached externally to a wall of the process chamber, detects voltage levels generated by a plasma within said process chamber. A relationship between the detected plasma voltage level and the wafer voltage is determined.

REFERENCES:
patent: 4358686 (1982-11-01), Kinoshita
patent: 4859908 (1989-08-01), Yoshida et al.
patent: 5451884 (1995-09-01), Sauerland
patent: 5557215 (1996-09-01), Saeki et al.
patent: 5667701 (1997-09-01), Sato et al.
patent: 5810963 (1998-09-01), Tomioka

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