Capacitance process by using passivation film scheme

Details Capacitance process by using passivation film scheme Capacitance process by using passivation film scheme

2007-01-30

2007-01-30

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S254000, C438S396000, C438S397000

Reexamination Certificate

active

10838674

ABSTRACT:
In accordance with the objectives of the invention a new method and structure is provided for the creation of a capacitor. A contact pad and a lower capacitor plate have been provided over a substrate. Under the first embodiment of the invention, a layer of etch stop material, serving as the capacitor dielectric is deposited after which a triple layer of passivation is created over a substrate. The compound passivation layer is first etched, using a fuse mask, to define and expose the capacitor dielectric and a fuse area after which the passivation layer is second etched to define and expose the contact pad. A layer of AlCu is then deposited, patterned and etched to create a capacitor upper plate and a contact interconnect over the contact pad. Under a second embodiment of the invention, a triple layer of passivation is created over a layer of etch stop material deposited over a substrate, a contact pad and a lower capacitor plate have been provided over the substrate. The compound passivation layer is first etched to expose the lower capacitor plate. A layer of capacitor dielectric is deposited after which the passivation layer is second etched to expose the contact pad. A layer of AlCu is then deposited, patterned and etched to create an AlCu interconnect over the contact pad and a upper capacitor plate.

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