Cantilevered microstructure

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

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257418, 257419, 7350415, H01L 2982

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active

057961522

ABSTRACT:
A cantilever microstructure includes a cantilever arm with a proximal end connected to a substrate and a freely movable distal end. The cantilever arm comprises first and second sections and includes a continuous layer which exhibits a first thermal co-efficient of expansion (TCE). In one embodiment, an electrical contact is positioned at the distal end of the cantilever arm. A first layer is positioned on a surface of the continuous layer and along the first section thereof. The first layer exhibits a second TCE which is different from the first TCE of the continuous layer. A second layer is positioned on a surface of the continuous layer and along the second section thereof. The second layer exhibits a third TCE which is different from the first TCE of the continuous layer. Electrical control circuitry selectively applies signals to the first and second layers to cause a heating thereof and a flexure of the cantilever arm so as to bring the distal end thereof into contact with a conductive substrate.

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