Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2007-03-26
2009-12-08
Siek, Vuthe (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000
Reexamination Certificate
active
07631287
ABSTRACT:
A method in which a desired pattern is compared with a finish pattern to be formed on a wafer, which is predicted from a design pattern, based on a calculation of a light beam intensity, and a deviation quantity of the finish pattern from the desired pattern at each edge of the finish pattern and the desired pattern is calculated, comprising setting a reference light beam intensity for setting the desired pattern on a wafer, setting an evaluation point for comparison of the finish pattern with the desired pattern, calculating a light beam intensity at the evaluation point, calculating a differentiation value of the light beam intensity at the evaluation point, calculating an intersection of the differentiation value with the reference light beam intensity, and calculating a difference between the intersection and the evaluation point, the difference defining an edge deviation quantity of the finish pattern from the desired pattern.
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Izuha Kyoko
Kotani Toshiya
Tanaka Satoshi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Lin Aric
Siek Vuthe
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