Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-02
1999-03-09
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257384, 257757, 257770, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
058805052
ABSTRACT:
A C49-structured titanium silicide film contains at least a refractory metal having a higher melting point than titanium in the form of a substitutional solid solution, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not less than 20 at %. On silicon, there is formed a titanium film which contains at least a refractory metal having a higher melting point than titanium, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not less than 20 at %. The titanium film is then subjected to a heat treatment in an inert gas atmosphere for causing a silicidation reaction, thereby to form a C49-structured titanium silicide film which contains the above at least a refractory metal in the form of a substitutional solid solution.
REFERENCES:
patent: 5750437 (1998-05-01), Oda
patent: 5776822 (1998-07-01), Fujii et al.
S.E. Babcock, et al., "Titanium-tungsten contacts to Si: The effects of alloying on Schottky contact and on silicide formation", pp. 6898-6905, American Institute of Physics, J. Appl. Phys. vol. 53, No. 10, Oct. 1982.
T.P. Nolan, et al., Modeling of agglomeration in polycrystalline thin films: Application to TiSi.sub.2 on a silicon substrate, pp. 720-724, American Institute of Physics, J. Appl. Phys. vol. 71, No. 2, Jan. 15, 1992.
Z.G. Xiag, et al., "TiSi.sub.2 Thin Films Formed on Crystalline and Amorphous Silicon", pp. 167-173, Materials Research Society, Mat. Res. Soc. Symp. Proc. vol. 181, 1990.
Fujii Kunihiro
Inoue Ken
Mikagi Kaoru
Miyakawa Kuniko
Chaudhuri Olik
NEC Corporation
Weiss Howard
LandOfFree
C49-structured tungsten-containing titanium salicide structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with C49-structured tungsten-containing titanium salicide structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and C49-structured tungsten-containing titanium salicide structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1324228