C-shaped dummy gate electrode semiconductor device and...

Details C-shaped dummy gate electrode semiconductor device and... C-shaped dummy gate electrode semiconductor device and...

2005-08-17

2009-08-04

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29134

Reexamination Certificate

active

07569887

ABSTRACT:
A semiconductor device has a substrate, a first gate electrode, and a second gate electrode. The substrate has an active region surrounded by an isolation region. The first gate electrode is formed on the active region through a gate insulating film. The second gate electrode is formed on the gate insulating film such that the second gate electrode overlaps at least a part of a boundary between the active region and the isolation region. The first gate electrode and the second gate electrode are separated from each other.

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patent: 6713822 (2004-03-01), Shimoji
patent: 6965150 (2005-11-01), Higashida et al.
patent: 2003/0209758 (2003-11-01), Lee et al.
patent: 60-225468 (1985-11-01), None
patent: 3-239368 (1991-10-01), None
patent: 4-254381 (1992-09-01), None

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