Butted source contact and well strap

Details Butted source contact and well strap Butted source contact and well strap

2011-03-15

2011-03-15

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21630

Reexamination Certificate

active

07906389

ABSTRACT:
A butted contact structure forming a source contact electrically connecting a voltage node and a well region and method for forming the same, the butted contact structure including an active region having a well region disposed adjacent an electrical isolation region on a semiconductor substrate; a MOSFET device including a source and drain region on the active region; and, a conductive contact having a first portion formed to the source region and a second portion formed through the electrical isolation region to the doped well region.

REFERENCES:
patent: 4530150 (1985-07-01), Shirato
patent: 2003/0211730 (2003-11-01), Park

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